磷化铟的合成方法及纳米尺度下的特殊形貌

… On the basis of previous experience with CdS and CdSe nanocrystals, we believe that this method results in the formation of less than a single monolayer of InP nanocrystals covalently …

InP quantum dots (QDs) are typical III-V group semiconductor nanocrystals that feature large excitonic Bohr radius and high carrier mobility. The merits of InP QDs include large absorption coefficient, broad color tunability, and low toxicity, which render them promising alternatives to classic Cd/Pb-based QDs for applications in practical settings. Over the past two decades, the advances in wet-chemistry methods have enabled the synthesis of small-sized colloidal InP QDs with the assistance of organic ligands. By proper selection of synthetic protocols and precursor materials coupled with surface passivation, the QYs of InP QDs are pushed to near unity with modest color purity. The state-of-the-art InP QDs with appealing optical and electronic properties have excelled in many applications with the potential for commercialization. This work focuses on the recent development of wet-chemistry protocols and various precursor materials for the synthesis and surface modification of InP QDs. Current methods for constructing light-emitting diodes using novel InP-based QDs are also summarized.

… synthesized InP nanocrystals (NCs) are drawing a large interest as a potentially less toxic alternative to CdSe-based nanocrystals… the emission wavelength of InP NCs can in principle …

… that the synthesis of InP nanocrystals is significantly more delicate than that of II−VI semiconductor nanocrystals. … In conclusion, a synthetic scheme for high quality InP nanocrystals was …

… The InP/ZnS core/shell nanocrystals synthesized here could be readily transferred into water … , InP nanocrystals with controlled size and size distribution were successfully synthesized in …

… -quality InP nanocrystals. Therefore, we devoted our efforts to synthesize InP nanocrystals in weak … High-quality InP nanocrystals were synthesized via this approach. The as-prepared …

… synthetic techniques, the most recent theories on InP formation mechanisms, the current understanding of InP surface chemistries, and the breadth of fluorescent properties of InP-based …

… synthesis of indium phosphide … InP formation at the molecular level. The mechanistic investigation is in good agreement with the conclusions drawn from the optimization of the synthetic …

As the most promising candidate for luminescent semiconductor materials in the future environmentally friendly society, InP nanocrystals (NCs) have attracted strong attention in the past decade. Tremendous efforts have been devoted to address the unstable and poor optical properties of InP NCs for practical applications. An extensive and in‐depth summary of existing literatures can not only provide an important reference for further optimizing of the optical properties of InP NCs, but also lay a foundation for subsequent related applications. In this review, the methods for the synthesis with different P sources and different ZnE (E = Se, S) shells are briefly summarized. The research progress in the optical properties investigation of InP/ZnE and InP/ZnE/ZnE NCs, including absorption, fluorescence, carrier dynamics, and nonlinear optics, are summarized. The relevant applications based on InP/ZnE and InP/ZnE/ZnE NCs are also presented, ranging from light emitting diodes, bioimaging, and solar cells to photocatalytic hydrogen production.

… Counting only the cost of the chemicals, we find that in a classical (TMS) 3 P based InP QDs synthesis, about 95% of the total synthesis cost is due to the phosphorus precursor (see …

Formation of InP quantum dots (QDs) in a non-coordinating solvent is divided into four stages for studying the chemical reactions. By introducing tertiary phosphines, such as trioctylphosphine (TOP), in the first stage, the four stages are all altered significantly, which enables the formation of InP QDs with high optical quality, that is, with a well-defined first-exciton absorption peak and a high-energy absorption shoulder in their ultraviolet–visible spectra. The first stage is the formation of a less sterically hindered complex with three monodentate carboxylates and one TOP ligand [In(TOP)(St)3] by reacting indium stearate [In(St)3] with TOP, which is soluble and reactive at room temperature. The second stage is the formation of InP clusters with near-unity yield and very small size by reacting In(TOP)(St)3 with tris(trimethylsilyl)phosphine [(TMS)3P] at ambient temperatures (20–50 °C). During the third stage, tiny InP clusters formed with the In(TOP)(St)3 precursor enable the formation of nearly mo...

… However, the InP QDs had generally shown amorphous or … first synthesis of well-crystallized (zinc blende structure) InP QDs … W e also report a synthesis for InP QDs that produces a very …

… for the fast synthesis of highly photoluminescent InP and InP/ZnS core–shell nanocrystals (NCs) covering a wide range of emissions from blue to the near infrared. Both InP and InP/ZnS …

Semiconductor nanocrystals or quantum dots (QDs) are nanometer-sized fluorescent materials with optical properties that can be fine-tuned by varying the core size or growing a shell around the core. They have recently found wide use in the biological field which has further enhanced their importance. This review focuses on the synthesis of indium phosphide (InP) colloidal semiconductor nanocrystals. The two synthetic techniques, namely, the hot-injection and heating-up methods are discussed. Different types of the InP-based QDs involving their use as core, core/shell, alloyed, and doped systems are reviewed. The use of inorganic shells for surface passivation is also highlighted. The paper is concluded by some highlights of the applications of these systems in biological studies.

… to deposit InP on different supporting materials. We synthesized in situ InP nanocrystals on … In these experiments, we wanted to develop the synthesis of the InP−TiO 2 composite that …

Nonpyrophoric aminophosphines reacted with indium(III) halides in the presence of zinc chloride have emerged as promising phosphorus precursors in the synthesis of colloidal indium phosphide (InP) quantum dots (QDs). Nonetheless, due to the required P/In ratio of 4:1, it remains challenging to prepare large-sized (>5 nm), near-infrared absorbing/emitting InP QDs using this synthetic scheme. Furthermore, the addition of zinc chloride leads to structural disorder and the formation of shallow trap states inducing spectral broadening. To overcome these limitations, we introduce a synthetic approach relying on the use of indium(I) halide, which acts as both the indium source and reducing agent for aminophosphine. The developed zinc-free, single-injection method gives access to tetrahedral InP QDs with an edge length > 10 nm and narrow size distribution. The first excitonic peak is tunable from 450 to 700 nm by changing the indium halide (InI, InBr, InCl). Kinetic studies using phosphorus NMR reveal the coexistence of two reaction pathways, the reduction of transaminated aminophosphine by In(I) and via redox disproportionation. Etching the surface of the obtained InP QDs at room temperature with in situ-generated hydrofluoric acid (HF) leads to strong photoluminescence (PL) emission with a quantum yield approaching 80%. Alternatively, surface passivation of the InP core QDs was achieved by low-temperature (140 °C) ZnS shelling using the monomolecular precursor zinc diethyldithiocarbamate. The obtained InP/ZnS core/shell QDs that emit in a range of 507-728 nm exhibit a small Stokes shift (110-120 meV) and a narrow PL line width (112 meV at 728 nm).

… (SiMe 3 ) 2 ] 2 precursor has been used previously for the preparation of InP whiskers in … synthesis and this work 4 is that we used two precursors, [Cl 2 InP(SiMe 3 ) 2 ] 2 and [(t-Bu) 2 InP…

… To select feasible QD morphologies, we introduced the surface coverage ratio α, the ratio … Following the limitation of α < 1, tetrahedra are the only cation-rich III–V QD morphologies …

Multidrug-resistant (MDR) infections pose a serious public health threat. Indium phosphide (InP) quantum dots (QDs) have huge advantages over conventional photocatalysts against …

… Too little catalyst resulted in lower selectivity for the wire morphology. Too much catalyst … We note that related decreases in the diameters of InP quantum dots photochemically etched …

… production of highly monodispersed nanoparticles. This paper … InP quantum dots using a novel precursor-based colloidal … synthesis and characterization of highly monodispersed InP …

Aminophosphines derived from N,N′-disubstituted ethylenediamines (R–N(H)CH2CH2N(H)–R; R = ortho-tolyl, phenyl, benzyl, iso-propyl, and n-octyl) were used to adjust the kinetics of InP nanocrystal f...

… ) and the first colloidal syntheses of quantum confined semiconductor nanoparticles was reported by … necessitating new approaches to the synthesis of this material in colloidal solutions. …

… The most successful and widely studied syntheses of colloidal InP rely on the hot injection … Colloidal, binary semiconductor nanoparticle syntheses typically incorporate either a single …

High-quality InP/ZnS core-shell nanocrystal quantum dots (NQDs) were synthesized as a heavy-metal-free alternative to the gain media of cadmium-based colloidal nanoparticles. Upon UV excitation, amplified spontaneous emission (ASE) and optical gain were observed, for the first time, in close-packed InP/ZnS core-shell NQDs. The ASE wavelength can be selected by tailoring the nanocrystal size over a broad range of the spectrum. Moreover, the optical gain profile of InP/ZnS NQDs was matched to the second order feedback of holographic polymer-dispersed liquid crystal gratings, leading to the very first demonstration of an optically-pumped, nanocrystal laser based on InP/ZnS core-shell NQDs.

… for the two-step mechanism discovered for the growth of InP nanocrystals. Here, the molecular … Cu 2 S and VO 2 nanoparticles instead of the direct growth of the ternary compound from …

… We cover the electronic and optical properties of InP QDs, their synthesis and the occurrence and passivation of electronic defects. We also examine the types of QD heterostructures on …

… precursor during QD growth and increases … InP surface to form the InP/InPO x or InP/In 2 O 3 core/shell structure. This hydroxide/oxide layer formation limits further nanoparticle growth. …

Indium phosphide (InP) semiconductor nanocrystals (NCs) provide a promising alternative to traditional heavy-metal-based luminescent materials for lighting and display technologies, and implementation of InP NCs in consumer products is rapidly increasing. As-synthesized InP NCs typically have very low photoluminescence quantum yields (PLQY), however. Although empirical methods have led to NCs with near-unity PLQYs, a fundamental understanding of how specific synthetic and post-synthetic protocols can alter the electronic landscape of InP NCs is still lacking. Here, we have studied a series of homologous InP NCs prepared from InP clusters using a combination of room-temperature and low-temperature time-resolved spectroscopies to elucidate how specific charge-carrier trapping processes are affected when various surface modifications are performed. The data allow identification of large PLQY increases that occur specifically through elimination of surface electron traps, and provide a rationale for understanding the microscopic origins of this trap suppression in terms of elimination of undercoordinated surface In3+ ions. Despite essentially complete elimination of surface electron trapping when surface In3+ is addressed, hole trapping still exists. This hole trapping is shown to be partially suppressed by even very thin shell growth, attributable to elimination of undercoordinated surface phosphides. We also observe signatures of bright-dark excitonic splitting in InP NCs with only sub-monolayer surface coverage of select additives (divalent Lewis acids or fluoride anions)-signatures that have only been previously observed in thick-shelled InP NCs. Together, these synthetic and spectroscopic results improve our understanding of relationships between specific InP NC surface chemistries and the resulting NC photophysics.

… We consider four InP dots with different sizes: (InP)107 , (InP)259 , (InP)712 , and (InP)3187 … This method has been applied previously to Si nanostructures,28,50 to CdSe dots,52 and to …

… Bohr radius in bulk InP (∼20 nm), quantum confinement effects can be excluded as the cause for the blue-shift seen in figure 2(b). Similar blue-shifts in InP nanowires larger than the …

Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.

There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.

… produced by laser pyrolysis. The method has been used to synthesize metal nanoparticles … precursor route to synthesize InP and GaP nanocrystals using diorganophosphides -M(PBut …

The effect of the outer surface of core/shell nanocrystals on the fluorescence quantum yield was observed for InAs/InP and InAs/CdSe core/shells (see picture). For InAs/CdSe we observed substantial enhancement of the fluorescence quantum yield compared to the InAs core, and up to two times larger than the laser dye IR-140. Such core/shell nanocrystals have potential use as biological fluorescent markers in the near IR spectral range.

… Solvothermal synthesis of InP QDs was based on the pyrolysis reaction between InCl 3 and … (LabRam HR) with the 514 nm line of Ar ion laser (a power of 0.5 mW). Core/shell structure …

… a synthesis of InP and InP@ZnS QDs using P 4 as a P precursor, which had been simply synthesized … CW and pulsed diode laser head (LDH-DC 450 and LDH-DC 510) coupled with a …

… The performance of indium phosphide (InP)-based materials … present a synthetic method of preparing a uniform InP core … acid to etch out the oxidative InP core surface during the growth …

A colloidal synthesis protocol is demonstrated for InAs@InP core@shell quantum dots (QDs) with a tunable InP shell thickness (ranging from 3 to 8 monolayers), utilizing tris(diethylamino)‐arsine and ‐phosphine. Structural analysis reveals that the InP shell preferentially grows onto the tetrahedral InAs cores along the <‐1‐1‐1> directions, forming tetrapodal‐shaped InAs@InP QDs. Growth of the InP shell causes a red shift in the absorption spectrum of the QDs. This is explained by considering that electrons are delocalized throughout the whole core@shell QDs, while holes preferentially leak along the <‐1‐1‐1> directions, as indicated by the density functional theory calculations. This means such heterostructures cannot be described as type‐I or quasi type‐II, contrary to earlier assumptions. The overlap of carrier wavefunctions throughout the entire InAs@InP QD structure results in no significant reduction of the Auger recombination rate, which remains as fast as in InAs QDs. However, the InP shell enhances photoluminescence (PL) efficiency (up to ≈13%) by passivating surface trap states of the InAs QDs (mainly located close to the top of the valence band). The overgrowth of a ZnSe shell endows the QDs with a high PL efficiency (≈55%) and good stability upon air exposure (≈80% PL intensity retention after 14 days).

Shell is of great significance to the enhancement in the photoluminescence quantum yield (PLQY) and stability of core–shell-type quantum dots (QDs). InP/ZnS core–shell QDs without intrinsic toxicity have shown huge potential as a replacement for the widely used cadmium-containing QDs; however, it is still challenging to control the growth of InP-based core–shell QDs due to the lattice mismatch between the InP core and ZnS shell. Here, we report on the synthesis of ∼15-nm-size InP/ZnSe/ZnS QDs with a thick ZnS outer shell by a layer-by-layer shell growth strategy. The ZnS shell was prepared by a circularly gradient temperature rise and long reaction procedure in each step, which not only ensures relatively low precursor concentration preventing the anisotropic growth of QDs but also allows the low-reactivity source to be decomposed sufficiently to achieve layer-by-layer growth of a thick ZnS shell. The resulting QDs show the highest PLQY of 73%, narrow emission line width of up to 40 nm, wide spectrum tuna...

As the concerns about using cadmium‐based quantum dots (QDs) in display are growing worldwide, InP QDs have drawn much attention in quantum dot light‐emitting diodes (QLEDs). However, pure blue InP based QLED has been rarely reported. In this work, first of all, pure blue InP/ZnS QDs with emission wavelength of 468 nm and quantum yield of 45% are synthesized. Furthermore, zinc oleate and S‐TOP are used as precursors to epitaxially grow the second ZnS shell. The residual zinc stearate reacted with S‐TOP to form ZnS shell, which increased the thickness and stability of QDs. Moreover, as the residual precursor of zinc stearate is removed, the current density increased from 13 mA cm−2 to 121 mA cm−2 at 8 V for the hole only device. External quantum efficiency increased from 0.6% of InP/ZnS QLED to 1.7% of InP/ZnS/ZnS QLED.

… we have verified to be the case for InP/ZnS quantum dots between 2 and 300 K. Note that, … The results from the fits for InP/ZnS core−shell NCs of various sizes are tabulated in Table 1, …

InP-based quantum dots (QDs) have been served as the promising candidates for photocatalytic application owing to their eco-friendly properties. However, the numerous surface defects of InP QDs result in the...

Indium phosphide (InP) has been regarded as the most promising composition of visible quantum dot (QD) emitters for the application to next-generation display devices primarily because of its envir...

Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II–VI shell on a III–V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.

Semiconductor quantum dots (QDs) possess unique electronic and optical properties, making them promising candidates for applications in light-emitting diodes, solar cells, bioimaging, and photocatalysis. Precise control over their size, shape, and chemical and electronic structure is crucial to ensure the desired functional properties and optimize device performance. However, challenges in QD synthesis and post-synthesis modification persist, especially in large-scale production. This study addresses the classification of QDs synthesized in a tubular flow reactor consisting of a mixture of the desired InP/ZnS core-shell QDs and QDs made from the shell material, i.e., here ZnS QDs formed as a byproduct during the formation step of the ZnS shell. The homogeneous nucleation of ZnS nanoparticles from the shelling material introduces a heterogeneity in size and composition and affects the optical properties of the resulting QDs. To address this issue, we developed a size-selective agglomeration (SSA) technique by incrementally introducing ethanol as a poor solvent and classified the synthesized QDs into 13 distinct fractions. These 13 fractions are sorted into three distinct groups: (i) larger InP/ZnS QDs, (ii) a combination of smaller InP/ZnS QDs and larger ZnS QDs, and (iii) predominant ZnS QDs with some very tiny InP/ZnS QDs. The comprehensive characterization of the fractions was conducted using UV-visible absorption spectroscopy, photoluminescence spectroscopy, high-resolution scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, total reflection X-ray fluorescence, and analytical ultracentrifugation. We could demonstrate that our method effectively separated unwanted ZnS QDs from the target InP/ZnS QDs. In addition, the fractions enriched in smaller InP/ZnS QDs exhibited a higher photoluminescence quantum yield compared to the fractions with larger QDs. This demonstrates the efficacy of SSA in fine-tuning the composition of QD mixtures produced on a larger scale to improve their functional properties. This approach provides fundamental understanding toward the development of a scalable two-dimensional classification process for such ultrasmall nanoparticles by particle size and composition.

… InP/ZnS core/shell QDs are a safer alternative to CdSe/ZnS QDs … Toxicity of CdSe/ZnS QDs appears to be related to the … core despite the two-layer ZnS shell. Since an almost identical …

Established methods to synthesize indium phosphide quantum dots (QDs) require high temperatures (>180 °C) to make high-quality material for optoelectronic applications. Nonpolar solvent environments are overwhelmingly used in InP QD synthesis to reach the necessary high temperatures and for compatibility with the reactive precursors. In this study, we explored InP QD synthesis in polar aprotic solvent environments to dramatically decrease the temperature required for InP crystallization by imparting ionicity to the precursors and stabilizing charged reaction intermediates. A custom air-free 96-well plate setup was employed to identify key factors impacting low-temperature QD formation, including an increased percentage of polar solvent, carboxylic acid choice, and inclusion of polar additives. Guided by these insights, we developed a synthesis of crystalline, green-emitting InP QDs at 60 °C in a toluene-dimethylformamide mixture. The QDs withstood established Zn2+ and HF surface treatments, which increased the photoluminescence quantum yield to 25%. Additionally, we demonstrated the rapid synthesis of quasi-wurtzite InP QDs at room temperature in a polar solvent environment using an acid-free indium myristate precursor.

… workers9 to synthesize monodisperse and soluble InP nanocrys- … luminescence (PL) spectra of the InP particles were recorded set-up. In this paper we describe a novel route to InP …

Two-dimensional (2D) III–V semiconductors hold exceptional promise for next-generation electronic and optoelectronic devices; however, their scalable synthesis remains a long-standing challenge owing to the strong, directional covalent bonding in non-layered crystal structures—which inherently suppresses natural cleavage and lateral growth. Here, we report a controllable, low-temperature (<450 °C) chemical vapor deposition (CVD) strategy enabling the direct synthesis of ultrathin, single- to few-layer InP nanosheets on commercially available mica substrates—without requiring costly lattice-matched buffers or catalytic templates. The as-grown InP nanosheets exhibit atomic-level thickness uniformity, large lateral dimensions (>10 μm), and high crystallinity, as confirmed by atomic-resolution imaging and electron diffraction. Cross-sectional scanning transmission electron microscopy (STEM) unambiguously reveals the absence of an interfacial van der Waals gap at the InP/mica interface, demonstrating that growth proceeds via interfacial chemical interaction rather than weak physisorption—thus representing a departure from conventional van der Waals epitaxy. Critically, nanosheet formation is exclusively observed on mica, whereas only isotropic nanoparticles nucleate on SiO2 and sapphire under identical conditions—highlighting mica's unique role as an atomically smooth, chemically inert, and defect-poor substrate that kinetically favors anisotropic lateral extension over 3D islanding. Polarization-resolved second-harmonic generation (SHG) measurements further confirm the non-centrosymmetric structure of the nanosheets and reveal exceptional optical homogeneity across micrometer-scale domains. Field-effect transistors fabricated from individual InP nanosheets show excellent bias stability, while photodetectors exhibit reproducible photoresponse with a maximum responsivity of 510 mA W−1 and a peak detectivity of 3.2 × 109 Jones under low-intensity illumination (0.1 mW cm−2). Collectively, this work establishes a generalizable, template-free route toward the 2D integration of non-layered III–V semiconductors and underscores the viability of 2D InP as a high-performance platform for ultrathin optoelectronics and quantum-confined devices.

Abstract We present a series of investigations focused on the effect of synthesis temperature on the optical characteristics of InP/ZnS QDs. Absorption spectra confirmed the successful synthesis of InP QDs under a temperature as low as 140 °C. Because of the poor optical characteristics possibly caused by the inherently high defect states on the surface of InP QDs, a modified ZnS shell overcoating was applied on the InP QDs. An InP core synthesized at a relatively low temperature of 160 °C or less is presumed to possess fewer surface defects; this was confirmed as a reduction in the red-shift due to the shell coating. A satisfactory quantum yield of 52% was obtained from the InP/ZnS QDs synthesized at a reaction temperature and reaction time of 140 °C and 20 h, respectively, with the ZnS shell coating. Thus, we successfully synthesized InP/ZnS QDs using an InP core synthesized at a low temperature of 140 °C through our suggested shell coating process.

The suitable direct bandgap, high carrier mobility, biologically nontoxicity, and size‐dependent physical properties of low‐dimensional indium phosphide InP (0D, 1D, and 2D) have attracted great interest from scientists. The appealing optical and electronic properties make them promising for the fabrication of state‐of‐the‐art nanoscale electronic and optoelectronic devices including photodiode, photodetector, and solar cells. This Review focuses on the recent development of low‐dimensional InP materials. The synthesis methods and growth mechanisms of high quality low‐dimensional InP are comprehensively recapped. The multifunctional applications in electronic and optoelectronic devices of low‐dimensional InP are discussed, and typical strategies to resolve the main challenges limiting the performance of low‐dimensional InP‐based application are then reviewed. Finally, a brief perspective on the challenges and opportunities of low‐dimensional InP in synthesis, electronics, and optoelectronics applications is also provided.

A simple template-free thermal chemical route has been developed to prepare InP nanotubes with zinc blende structure by controlling the reaction temperature and flowing gas. The synthesized InP nanotubes are single-crystalline, free from defects and dislocations, and partially filled with In. The presence of metallic indium at tips of and within the synthesized InP nanotubes indicated a vapor–liquid–solid mechanism for the formation of InP nanotubes. The synthesized InP single-crystalline nanotubes grew along [1¯10] direction. The synthesized InP nanotubes have a uniform outer diameter of 50–60 nm and a wall thickness of 7–10 nm. The photoluminescence spectrum at room temperature exhibits a great shift from the bulk band gap of 1.35 eV to high energy of 1.49 eV.

… The synthesized InP QDs are very much stable when stored in atmosphere, unlike those25 obtained by low temperature reaction; this can be attributed to the higher crystallinity …

… At relatively low temperature the growth rate is controlled by the crystal growth rate at the … dopants added to the InP target influence this temperature. The InP concentration in the droplet …

… , to traditionally used organic fluorophores. Since the properties … Thus, for narrow distribution of nanoparticles, the nucleation … , 14.5 ml of MeIm and 0.5 ml of water is heated under reflux …

… , crystalline InP was obtained from reactions conducted in refluxing … With mantle heating, In nanoparticles collecting on the … This allows SLS InP growth to proceed in organic-solvent …

… superior emissive properties over organic fluorophores, including … solution for the indium phosphide nanoparticle synthesis. … The reflux condenser was inserted into the middle neck of …

… Green and O'Brien 22 report the synthesis of InP and GaP NPs … trichlorides in trioctyl amine under refluxing conditions. … an aqueous to an organic medium for the synthesis of NPs. Here…

… to be soluble in both aqueous and organic media. While Rh … The method involves refluxing the cadmium precursor with Se … 12, we show the TEM and HREM images of InAs@InP and …

… after ablation of pyrolytic graphite in vacuum by (A) a KrF laser and (B) an ArF laser, both at … By ablating a binary semiconductor such as InP, mixed clusters of the type InmPn result (40); …

… However, as a typical phosphorus containing material, InP scrap recycling is difficult and … -pressure pyrolysis–spray condensation” process is proposed. Firstly, InP is decomposed into …