铯铅溴、铯铜碘熔体法生长

The Bridgman method for single-crystal growth enables the formation of crystals at the lower end of the molten material by cooling it under a precisely controlled temperature gradient. This makes it particularly suitable for producing high-quality single-crystal materials. Over the years, the Bridgman technique has become widely adopted for growing single crystals of semiconductors, oxides, sulfides, fluorides, as well as various optoelectronic, magnetic, and piezoelectric materials. Recently, there has been growing interest in metal halide materials, with the growth of high-quality metal halide single crystals emerging as a major focus for both the scientific community and industry. However, traditional solution-based single-crystal growth methods have several limitations, such as slow growth rates, inconsistent crystal quality, challenges in solvent selection, and difficulties in controlling saturation levels. These issues present significant obstacles, particularly when large, defect-free, high-quality single crystals are needed for certain high-performance materials. As a result, the Bridgman method has emerged as an effective solution to overcome these challenges. This review provides an overview of various categories of metal halide single-crystal systems grown using the Bridgman method in recent years. The systems are classified based on their dimensionality into three-dimensional, two-dimensional, and zero-dimensional metal halide structures. Furthermore, we highlight novel metal halide single crystals developed through the Bridgman technique. Additionally, we offer a brief introduction to the structures, properties, and applications of these single crystals, underscoring the crucial role of the Bridgman method in advancing research in this field.

Ultrafast scintillators are essential for next-generation radiation detection, positron emission tomography, and high-speed medical imaging. All-inorganic CsPbBr3 perovskites are attractive candidates because of their high stopping power, and excellent optical...

… Cesium lead bromide belongs to a family of crystal structures called lead halide perovskites … of bulk single crystals of CsPbBr 3 was carried out using the vertical bridgeman method [24]. …

Abstract The Bridgman growth technique remains a foundational method for producing high-quality single crystals, with recent innovations significantly enhancing its effectiveness. This review identifies a key gap in the current literature a fragmented understanding of how such advancements impact material performance and applications. The paper aims to consolidate recent developments in the Bridgman method, focusing on improvements like advanced furnace designs, precise temperature control, and the use of seed crystals. It explores applications in semiconductors and optoelectronics, particularly within electronics, energy, and photonics. The review also highlights future opportunities and challenges, critically assessing the technique’s strengths and limitations in modern material science.

… of all-inorganic lead halide perovskites, cesium lead bromine (… All-inorganic lead halide perovskites especially cesium lead … , the principle of crystal growth using Bridgman technique is …

Cs3Cu2I5, a nontoxic broad emitter with exceptional blue-emissive properties, holds great promise for optoelectronic applications. However, achieving large-size, high-quality single crystals with minimal defects remains a critical challenge. We report a defect engineering strategy to optimize the growth of high-quality Cs3Cu2I5 single crystals by systematically controlling the growth parameters and characterizing defects. Using the Bridgman method with precisely controlled molar ratios (CuI/CsI = 39%:61%) and thermal conditions (G = 16 K/cm, v = 0.45 mm/h), we demonstrate that constitutional supercooling-induced eutectic decomposition (L → Cs3Cu2I5 + CsCu2I3) leads to the formation of interlaced inclusions exhibiting a globule-to-lamellar transition morphology. Advanced microstructural and optical characterization revealed that these defect structures induced lattice expansion and competitive photon absorption, reducing the photoluminescence quantum yield by approximately 40% and lowering optical transmittance from 89 to 84%. Our defect-controlled growth approach achieves a 30% higher PLQY compared with conventional methods, establishing critical correlations between growth conditions, defect evolution, and optoelectronic performance in this promising lead-free blue-emitting perovskite system. These findings provide fundamental insights and practical guidelines for developing high-performance perovskite single crystals for advanced optoelectronic applications.

The all-inorganic halide perovskite CsPbBr3 has emerged as an excellent class of semiconductive and optoelectronic materials, in which its excellent properties are strongly related to the dynamics of its microstructures, i.e., ferroelastic domain walls. Here, the influence of ferroelastic domain walls on the macroscopic charge transport and photoluminescent properties in bulk single-crystal CsPbBr3 is experimentally and intrinsically studied across wide temperature intervals. The larger area of the same domain orientation, along with denser and thinner domain walls in a bulk CsPbBr3 single crystal, is formed through the Pnma↔P4/mbm↔Pm3̅m phase transitions. Remarkable motion of the domain walls near the P4/mbm↔Pm3̅m transition point is observed using in situ polarized optical microscopy. We initially observed a sharp decrease in resistivity after inducing larger areas with long-range order and denser, thinner domain walls in the temperature range from 273 to 343 K upon heating. In addition, the ferroelastic domain walls modulate exciton-phonon interactions and enhance radiative recombination in the CsPbBr3 single crystal, which correlates with the decrease in resistivity. These results will motivate strategies to design high-performance semiconductive and optoelectronic materials or devices by inducing specific ferroelastic domain walls in metal halide perovskites.

CsPbBr₃ is an all-inorganic halide perovskite with excellent photoluminescence (PL) properties for laser applications. Amplified spontaneous emission (ASE) is a prerequisite for lasing and typically observed from low-dimensional CsPbBr3 nanostructures, where quantum confinement enhances ASE. However, a gain medium for lasing should be prepared into a robust bulk form that works under intense light illumination. Here, we demonstrate that bulk CsPbBr₃ single crystals exhibit highly efficient ASE with a threshold of 46 MWcm^-2 at 520 nm, if PL reabsorption via the indirect Rashba gap is properly suppressed by thickness control. Based on a series of spectroscopic and microscopic measurements, we show that this below-the-gap absorption can significantly alter the PL feature and even the apparent color of the crystal depending on the crystal size. Our results show that a thin CsPbBr₃ single crystal can be utilized for lasing applications when engineered into a submillimeter thickness for effective light–matter interaction.

These authors show that perovskites support a new state of quantum confined excitonic polarons.

All inorganic perovskite CsPbBr3 shows great potential in laser device because of its excellent luminescence characteristics, while the room temperature amplified spontaneous emission (ASE) in a large size CsPbBr3 bulk single crystal is still quite difficult. Herein, we have obtained the room temperature ASE in a sub-centimeter size CsPbBr3 bulk single crystal pumped with the single-photon excitation. Based on the reproducible light path within the CsPbBr3 bulk single crystal, the photonic feedback between the bottom and top facets naturally enhances the population inversion, which exhibits an amplified spontaneous emission threshold of ∼320 µJ/cm2. The blue shift of the ASE peak along with the increased pumping intensity is also observed and ascribed to the reduction of the refractive index and the energy band filling effect. These findings demonstrate the sub-centimeter size CsPbBr3 bulk single crystal to be an excellent candidate as an optical gain media for crystal lasers.

The CsPbBr3 perovskite material has excellent optoelectronic properties such as large light absorption coefficient, high carrier mobility, long diffusion length, etc., and thus it shows good application prospects in solar cells, photodetectors, high-energy radiation detectors and other fields. Compared with polycrystalline thin films, a single crystal perovskite without grain boundaries has better photoelectric performance, showing photovoltaic potential with higher efficiency and stability. Therefore, the fabrication of CsPbBr3 perovskite single crystals is very important to further explore the potential of single crystal perovskites in various applications. This review systematically summarizes the latest research progress of perovskite CsPbBr3 crystal growth in recent years, and introduces its applications in photodetectors, high-energy radiation detectors, and solar cells. Finally, the challenges and perspectives of perovskite CsPbBr3 crystals are discussed.

Gamma-ray detection and spectroscopy is the quantitative determination of their energy spectra, and is of critical value and critically important in diverse technological and scientific fields. Here we report an improved melt growth method for cesium lead bromide and a special detector design with asymmetrical metal electrode configuration that leads to a high performance at room temperature. As-grown centimeter-sized crystals possess extremely low impurity levels (below 10 p.p.m. for total 69 elements) and detectors achieve 3.9% energy resolution for 122 keV 57Co gamma-ray and 3.8% for 662 keV 137Cs gamma-ray. Cesium lead bromide is unique among all gamma-ray detection materials in that its hole transport properties are responsible for the high performance. The superior mobility-lifetime product for holes (1.34 × 10−3 cm2 V−1) derives mainly from the record long hole carrier lifetime (over 25 μs). The easily scalable crystal growth and high-energy resolution, highlight cesium lead bromide as an exceptional next generation material for room temperature radiation detection. Detection and spectroscopic measurements of gamma-ray used to rely on expensive materials such as CdZnTe crystals. Here He et al. develop a melt method to grow large size CsPbBr3 perovskite crystals and the devices achieve low cost, high energy resolving capabilities and stability.

Nuclear radiation detectors serve as fundamental tools in fields of medical imaging, nuclear radiation monitoring, security inspection, and advanced technology development, and their continuous advancement is vital for public safety and propelling progress in nuclear medicine. The performance improvement of the detectors is predominantly dependent on the development of advanced detection materials. Among various nuclear radiation detection materials, halide perovskite CsPbBr 3 single crystals stand out because of the combined capabilities of wide band gap, high resistivity, and high carrier mobility-lifetime product. This article systematically reviews recent progress in the growth of CsPbBr 3 single crystals, the characterization of crystal quality, and the application in nuclear radiation detectors, which provides the qualitative correlation between key physical properties of the single crystal and crucial performance metrics of the detector.

… According to Stevels [40], dielectric loss mechanism mainly includes conduction losses, dipole losses and vibrational losses, but it remained unknown for CsPbBr 3 bulk crystals. To …